Relaxation of dielectric thin films under Ar+ laser irradiation

Zhouling Wu; C. Z. Tan; J. Arndt; Zhengxiu Fan

doi:10.1117/12.147427

24 June 1993 Relaxation of dielectric thin films under Ar+ laser irradiation

Zhouling Wu, C. Z. Tan, J. Arndt, Zhengxiu Fan

Author Affiliations +

Proceedings Volume 1848, 24th Annual Boulder Damage Symposium Proceedings -- Laser-Induced Damage in Optical Materials: 1992; (1993) https://doi.org/10.1117/12.147427
Event: Optical Materials for High Power Lasers, 1992, Boulder, CO, United States

Abstract

Ar⁺ laser irradiation can produce change, most of the time decrease, in optical absorption of various electron beam deposited (EBD) dielectric thin films. Similar phenomena were also found in bulk materials prepared under high pressure and high temperature conditions. In this paper we report our recent progress in understanding the problem by employing a relaxation function which can fit the in-situ measured time dependent change in absorption of various dielectric thin films. Results of SiO₂, TiO₂, Ta₂O₅, ZrO₂, HfO₂ films and SiO₂ bulk samples were reported and compared.

Citation Download Citation

Zhouling Wu, C. Z. Tan, J. Arndt, and Zhengxiu Fan "Relaxation of dielectric thin films under Ar+ laser irradiation", Proc. SPIE 1848, 24th Annual Boulder Damage Symposium Proceedings -- Laser-Induced Damage in Optical Materials: 1992, (24 June 1993); https://doi.org/10.1117/12.147427

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

;

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE