Paper
9 June 1993 GaAs PCSS: high-gain switching and device reliability
Fred J. Zutavern, Guillermo M. Loubriel, Dan L. McLaughlin, Marty W. O'Malley, Wesley D. Helgeson, Gary J. Denison
Author Affiliations +
Proceedings Volume 1873, Optically Activated Switching III; (1993) https://doi.org/10.1117/12.146562
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States
Abstract
Characteristics of GaAs photoconductive semiconductor switches (PCSS) during the initiation and sustaining phases of high gain switching are studied in this paper. Infrared electro-photo luminescence data are present which show current filaments during high gain switching mode. Triggering of these devices with multiple fiber optics is demonstrated and the implications for high average current density switching are discussed. Switch jitter with high field lateral PCSS has been tested and its impact on multiswitch systems is explored. Results from high repetition rate device lifetime testing are also reported. Lateral switches with several types of contacts (including: refractory metallizations, diffused and ion-implanted Ohmic layers) have been fabricated and tested. Switch characteristics and lifetime results will be discussed for each of these fabrication schemes.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Fred J. Zutavern, Guillermo M. Loubriel, Dan L. McLaughlin, Marty W. O'Malley, Wesley D. Helgeson, and Gary J. Denison "GaAs PCSS: high-gain switching and device reliability", Proc. SPIE 1873, Optically Activated Switching III, (9 June 1993); https://doi.org/10.1117/12.146562
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Cited by 3 scholarly publications.
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KEYWORDS
Switches

Switching

Gallium arsenide

Semiconductor lasers

Picosecond phenomena

Reliability

Gain switching

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