Paper
24 June 1993 Dual exposure (e-beam and i-line) of OCG-895i resist
Richard J. Bojko, Graham M. Pugh
Author Affiliations +
Abstract
A process is described in which OCG-895i resist is exposed using both e-beam and i-line optical exposures. This dual exposure allows efficient writing of patterns requiring both fine geometries and large areas in a single lithographic layer. The unique aspect of this process is that the two exposure methods use completely independent developers. This allows the optical exposures to be aligned directly to the e-beam exposed resist, eliminating the need for 'zero- level' alignment marks. E-beam features as small as 200 nm lines and spaces, connected by large photo-exposed pads, have been fabricated. The process presented here results in e-beam contrast of 4.8, with insignificant unexposed film loss. The photo-exposure characteristics are unchanged by the e-beam exposure and develop process. The application of this process to the fabrication of surface acoustic wave devices is discussed.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Richard J. Bojko and Graham M. Pugh "Dual exposure (e-beam and i-line) of OCG-895i resist", Proc. SPIE 1924, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III, (24 June 1993); https://doi.org/10.1117/12.146507
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Cited by 1 scholarly publication.
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KEYWORDS
Semiconducting wafers

Photoresist processing

Etching

Electron beam lithography

Optical alignment

Optical lithography

HF etching

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