Study of trimethylsilyldiethylmine (TMSDEA) as a vapor priming agent

Myron R. Cagan; James Bradford Gushaw; Joseph Wiseman; David C. Tien

doi:10.1117/12.154779

15 September 1993 Study of trimethylsilyldiethylmine (TMSDEA) as a vapor priming agent

Myron R. Cagan, James Bradford Gushaw, Joseph Wiseman, David C. Tien

Proceedings Volume 1925, Advances in Resist Technology and Processing X; (1993) https://doi.org/10.1117/12.154779
Event: SPIE'S 1993 Symposium on Microlithography, 1993, San Jose, CA, United States

Abstract

TMSDEA gives consistently higher contact angles than HMDS on substrates typically encountered in IC processing. The effect of water drop contact angle on resist adhesion is demonstrated. A solution of 0.5% vol TMSDEA in HMDS, used at a 50 degree(s)C hotplate temperature, was found to be optimum for a Tokyo Electron Laboratory Mk-V track vapor prime process. Observations made with three reticle levels on bare silicon do not show any exposure dose or resist profile differences between TMSDEA and HMDS vapor primed wafers.

Citation Download Citation

Myron R. Cagan, James Bradford Gushaw, Joseph Wiseman, and David C. Tien "Study of trimethylsilyldiethylmine (TMSDEA) as a vapor priming agent", Proc. SPIE 1925, Advances in Resist Technology and Processing X, (15 September 1993); https://doi.org/10.1117/12.154779

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