Chromeless phase-shift technology: the physical mechanism of the dark area produced by phase compensation and its application

Long Que; Guoliang Sun; Boru Feng

doi:10.1117/12.150464

8 August 1993 Chromeless phase-shift technology: the physical mechanism of the dark area produced by phase compensation and its application

Long Que, Guoliang Sun, Boru Feng

Author Affiliations +

Proceedings Volume 1927, Optical/Laser Microlithography; (1993) https://doi.org/10.1117/12.150464
Event: SPIE'S 1993 Symposium on Microlithography, 1993, San Jose, CA, United States

Abstract

In the study of phase-shift mask technology, we found a peculiar phenomenon: on certain conditions, phase-shift mask behaves like an opaque area (dark area). In order to know the reason, we discuss and analyze the mechanism of the phenomenon in detail, using diffraction theory and information theory. Also we found that there exists a critical value of the non- phase-shift area's dimension, as long as we are below the value, we can make a phase-shift mask be a dark area, no matter what kind of shape the mask has. In the meantime, the applications of the phenomenon are also suggested.

Citation Download Citation

Long Que, Guoliang Sun, and Boru Feng "Chromeless phase-shift technology: the physical mechanism of the dark area produced by phase compensation and its application", Proc. SPIE 1927, Optical/Laser Microlithography, (8 August 1993); https://doi.org/10.1117/12.150464

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