Intensity optimization for phase-shifting masks

Kevin D. Lucas; Andrzej J. Strojwas; K. K. Low; Chi-Min Yuan

doi:10.1117/12.150442

8 August 1993 Intensity optimization for phase-shifting masks

Kevin D. Lucas, Andrzej J. Strojwas, K. K. Low, Chi-Min Yuan

Proceedings Volume 1927, Optical/Laser Microlithography; (1993) https://doi.org/10.1117/12.150442
Event: SPIE'S 1993 Symposium on Microlithography, 1993, San Jose, CA, United States

Abstract

The creation of stable, defect free, and correctly biased phase shifting masks (PSMs) is a difficult task. The behavior of PSMs, with their complicated structures and topographies, is highly sensitive to process parameters. A method of equalizing the intensity transmission by applying a wet etchant to the reticle and etching back both shifted and unshifted openings has been proposed. The etchback is used to reduce or alter the sidewall light scattering effects, leading to intensity equalization. The proposed method has been shown to cause intensity equalization for i-line and DUV illuminated alternating PSMs. However, many questions remain about the effective use of this method.

Citation Download Citation

Kevin D. Lucas, Andrzej J. Strojwas, K. K. Low, and Chi-Min Yuan "Intensity optimization for phase-shifting masks", Proc. SPIE 1927, Optical/Laser Microlithography, (8 August 1993); https://doi.org/10.1117/12.150442

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available