Picosecond signal recovery of type II tunneling bi-quantum-well etalon in all-optical gate operation

Atsushi Tackeuchi; Tsuguo Inata; Yoshiki Nakata; Satoshi Nakamura; Yoshihiro Sugiyama; Shunichi Muto

doi:10.1117/12.162795

19 November 1993 Picosecond signal recovery of type II tunneling bi-quantum-well etalon in all-optical gate operation

Atsushi Tackeuchi, Tsuguo Inata, Yoshiki Nakata, Satoshi Nakamura, Yoshihiro Sugiyama, Shunichi Muto

Proceedings Volume 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II; (1993) https://doi.org/10.1117/12.162795
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications II, 1993, Trieste, Italy

Abstract

We demonstrate picosecond signal recovery in all optical gate operation using a type II tunneling bi-quantum well (TBQ) etalon. Type II TBQ consists of a series of GaAs wells, AlGaAs barriers, and AlAs layers. The recovery time from excitonic absorption bleaching in GaAs wells is governed by tunneling of electrons out of the well through AlGaAs barriers into AlAs layers. The type-II TBQ etalon with 1.7 nm barriers shows 17 ps-recovery.

Citation Download Citation

Atsushi Tackeuchi, Tsuguo Inata, Yoshiki Nakata, Satoshi Nakamura, Yoshihiro Sugiyama, and Shunichi Muto "Picosecond signal recovery of type II tunneling bi-quantum-well etalon in all-optical gate operation", Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); https://doi.org/10.1117/12.162795

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