Photoluminescence of 2D excitons in Ge layers of Ge-Ge1-xSix superlattices

N. G. Kalugin; L. K. Orlov; Oleg A. Kuznetsov; A. L. Chernov

doi:10.1117/12.166807

31 January 1994 Photoluminescence of 2D excitons in Ge layers of Ge-Ge_1-xSi_x superlattices

N. G. Kalugin, L. K. Orlov, Oleg A. Kuznetsov, A. L. Chernov

Proceedings Volume 2089, 9th International Conference on Fourier Transform Spectroscopy; (1994) https://doi.org/10.1117/12.166807
Event: Fourier Transform Spectroscopy: Ninth International Conference, 1993, Calgary, Canada

Abstract

This work reports first observation of a 2D-exciton luminescence in thin (8 - 25 nm) Ge layers of Ge-Ge_1-xSi_x multiple quantum well structures grown on Ge [111] substrates. Photoluminescence spectra was studied at temperatures 2 - 300 K using a BOMEM DA3.36 Fourier-transform spectrometer with a cooled InSb detector, and use of a Nd:YAG laser radiation ((lambda) equals 1.06 micrometers ) for excitation. The shape of the luminescence spectral lines was corrected by black body calibration of the spectrometer.

Citation Download Citation

N. G. Kalugin, L. K. Orlov, Oleg A. Kuznetsov, and A. L. Chernov "Photoluminescence of 2D excitons in Ge layers of Ge-Ge_1-xSi_x superlattices", Proc. SPIE 2089, 9th International Conference on Fourier Transform Spectroscopy, (31 January 1994); https://doi.org/10.1117/12.166807

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