In-situ monitoring of molecular beam epitaxial growth using single photon ionization

April L. Alstrin; Adina K. Kunz; Stephen R. Leone

doi:10.1117/12.180867

21 July 1994 In-situ monitoring of molecular beam epitaxial growth using single photon ionization

April L. Alstrin, Adina K. Kunz, Stephen R. Leone

Author Affiliations +

Proceedings Volume 2125, Laser Techniques for Surface Science; (1994) https://doi.org/10.1117/12.180867
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

Single photon laser ionization time-of-flight mass spectroscopy is used to monitor the gaseous fluxes of Ga, As₂, and As₄, which are relevant in molecular beam epitaxy (MBE) of GaAs. This noninvasive and real-time technique measures densities, and hence fluxes, of multiple chemical species impinging on or scattered from a substrate during conventional MBE. With single photon ionization at 118 nm (10.5 eV), the energy is sufficient to ionize the species, but insufficient to ionize and fragment. The lack of molecular fragmentation greatly simplifies the interpretation of mass spectra. Additionally, the probe geometry permits simultaneous film growth monitoring using RHEED. Results will be presented on the probing of scattering and desorption of III-V MBE species during GaAs growth. This technique promises to be a valuable in-situ diagnostic for III-V and II-VI MBE.

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April L. Alstrin, Adina K. Kunz, and Stephen R. Leone "In-situ monitoring of molecular beam epitaxial growth using single photon ionization", Proc. SPIE 2125, Laser Techniques for Surface Science, (21 July 1994); https://doi.org/10.1117/12.180867

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