Scanning tunneling microscopy and angle of mounds study of gallium arsenide grown by molecular beam epitaxy

Bradford G. Orr; M. D. Johnson; C. Orme; John L. Sudijono; A. W. Hunt

doi:10.1117/12.175784

11 May 1994 Scanning tunneling microscopy and angle of mounds study of gallium arsenide grown by molecular beam epitaxy

Bradford G. Orr, M. D. Johnson, C. Orme, John L. Sudijono, A. W. Hunt

Proceedings Volume 2140, Epitaxial Growth Processes; (1994) https://doi.org/10.1117/12.175784
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

The molecular beam epitaxy growth of GaAs homoepitaxial films has been studied. Scanning tunneling microscopy images show that in the earliest stages of growth the surface morphology oscillates between one with two-dimensional islands and flat terraces. Concomitant with the decay of the RHEED oscillations, the surface morphology evolves to a dynamical steady state characterized by a constant value of the step density. Numerical models of the growth allow a prediction to be made for the asymtotic value of the step density. On a larger length scale (approximately 10 micrometers ) the surface morphology is found to consist of large mounds. The angle of the mounds with respect to the substrate is fixed and is determined by the separation between nucleating islands. This growth instability is found for singular surfaces and is absent for vicinal surfaces grown under step flow conditions.

Citation Download Citation

Bradford G. Orr, M. D. Johnson, C. Orme, John L. Sudijono, and A. W. Hunt "Scanning tunneling microscopy and angle of mounds study of gallium arsenide grown by molecular beam epitaxy", Proc. SPIE 2140, Epitaxial Growth Processes, (11 May 1994); https://doi.org/10.1117/12.175784

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