Temperature dependence of refractive index as a basis for laser thermometry of semiconductor crystals

Alexander N. Magunov

doi:10.1117/12.213174

23 June 1995 Temperature dependence of refractive index as a basis for laser thermometry of semiconductor crystals

Alexander N. Magunov

Proceedings Volume 2208, Refractometry; (1995) https://doi.org/10.1117/12.213174
Event: Refractometry: International Conference, 1994, Warsaw, Poland

Abstract

The quantitative description of interferogram registered in heating of crystal which has a finite angle between two surfaces and irradiating of crystal with sounding laser beam is given. The possibility of continuous measurement in real time of crystal's temperature using imperfect interferogram is discussed.

Citation Download Citation

Alexander N. Magunov "Temperature dependence of refractive index as a basis for laser thermometry of semiconductor crystals", Proc. SPIE 2208, Refractometry, (23 June 1995); https://doi.org/10.1117/12.213174

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