Fabrication of reliable x-ray mask using high-temperature deposited SiN membrane by low-pressure chemical vapor deposition system

Tsuneaki Ohta; R. Kumar; Shuichi Noda; Masanori Kasai; Hiroshi Hoga

doi:10.1117/12.191942

3 November 1994 Fabrication of reliable x-ray mask using high-temperature deposited SiN membrane by low-pressure chemical vapor deposition system

Tsuneaki Ohta, R. Kumar, Shuichi Noda, Masanori Kasai, Hiroshi Hoga

Author Affiliations +

Proceedings Volume 2254, Photomask and X-Ray Mask Technology; (1994) https://doi.org/10.1117/12.191942
Event: Photomask Japan '94, 1994, Kawasaki City, Kanagawa, Japan

Abstract

The SiN membranes were deposited by using high temperature LPCVD system. The SiN films deposited over 1000 degree(s)C showed the suitable properties for X-ray mask, such as well- controlled tensile stress of 5 X 10⁷ Pa, high optical transmittance over 95% and low impurity concentrations. The high optical transmittance of the SiN films deposited over 1000 degree(s)C was related to the high N/Si. The X-ray masks fabricated by using the SiN membranes deposited at 1000 degree(s)C showed the high optical transmittance of about 92% and X-ray durability. The pattern position displacement induced by SR irradiation was simulated using FEM calculation with qualitative agreement.

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Tsuneaki Ohta, R. Kumar, Shuichi Noda, Masanori Kasai, and Hiroshi Hoga "Fabrication of reliable x-ray mask using high-temperature deposited SiN membrane by low-pressure chemical vapor deposition system", Proc. SPIE 2254, Photomask and X-Ray Mask Technology, (3 November 1994); https://doi.org/10.1117/12.191942

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