Influence of carbon doping on physical properties of SI GaAs

Andrzej Hruban; S. Strzelecka; M. Gladysz; E. Jurkiewicz Wegner; W. Orlowski; A. Mirowska; M. Piersa; B. Surma

doi:10.1117/12.224972

16 October 1995 Influence of carbon doping on physical properties of SI GaAs

Andrzej Hruban, S. Strzelecka, M. Gladysz, E. Jurkiewicz Wegner, W. Orlowski, A. Mirowska, M. Piersa, B. Surma

Proceedings Volume 2373, Solid State Crystals: Materials Science and Applications; (1995) https://doi.org/10.1117/12.224972
Event: Solid State Crystals: Materials Science and Applications, 1994, Zakopane, Poland

Abstract

Undoped and C-doped GaAs crystals, grown by the LP LEC and HP LEC techniques have been investigated. Carbon was incorporated into the melt during synthesis of monocrystallization in the range 6 multiplied by 10¹⁴ divided by 2 multiplied by 10¹⁶ cm^-3. Controlled carbon doping allows us to obtain SI GaAs crystals with high resistivity rho greater than 10⁷ (Omega) cm and high mobility mu greater than or equal to 5000 cm²/Vs.

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Andrzej Hruban, S. Strzelecka, M. Gladysz, E. Jurkiewicz Wegner, W. Orlowski, A. Mirowska, M. Piersa, and B. Surma "Influence of carbon doping on physical properties of SI GaAs", Proc. SPIE 2373, Solid State Crystals: Materials Science and Applications, (16 October 1995); https://doi.org/10.1117/12.224972

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