EBR900 processes in e-beam and laser beam lithographies for photomask fabrication

Masa-aki Kurihara; Minoru Komada; Hisashi Moro-oka; Naoya Hayashi; Hisatake Sano

doi:10.1117/12.209164

19 May 1995 EBR900 processes in e-beam and laser beam lithographies for photomask fabrication

Masa-aki Kurihara, Minoru Komada, Hisashi Moro-oka, Naoya Hayashi, Hisatake Sano

Proceedings Volume 2437, Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing V; (1995) https://doi.org/10.1117/12.209164
Event: SPIE's 1995 Symposium on Microlithography, 1995, Santa Clara, CA, United States

Abstract

The performance of EBR900 (Toray) as a resist used for e-beam and laser beam lithographies has been investigated. EBR900 has high sensitivity to both e-beam and laser beam exposures. It has high resolution and good dry-etch durability. The e-beam process was optimized by designing a new type of developer, MA50, which is composed of an amine and an aqueous solution of potassium hydroxide. The addition of the amine was found to be effective in improving the performance with regard to profile, CD uniformity, and defect quality. Its performance is stable (e.g., CD deviation is less than 0.03 micrometers for a shelf time of a month); this makes CD control easier. Its CD linearity in the laser beam process is down to 0.6 micrometers , being better than that in the e-beam one (down to 1.0 micrometers ). Its dissolution rate and conversion yield of the photosensitizer were estimated in order to explain the superiority of the laser process. A comparison of its performance between e-beam and laser beam processes for next generation photomask fabrication was presented. In conclusion, EBR900 meets the requirements for 64 Mb DRAM reticles for the use in e- beam and laser beam lithographies.

Citation Download Citation

Masa-aki Kurihara, Minoru Komada, Hisashi Moro-oka, Naoya Hayashi, and Hisatake Sano "EBR900 processes in e-beam and laser beam lithographies for photomask fabrication", Proc. SPIE 2437, Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing V, (19 May 1995); https://doi.org/10.1117/12.209164

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available