Multilayer process of T-shaped transistor gates for GaAs-pseudomorphic HEMTs using e-beam resist technology and i-line negative resist with optical stepper lithography

Joachim Schneider; Fred Becker; Karlheinz Glorer; Birgit Weismann; Norbert Muenzel

doi:10.1117/12.210407

9 June 1995 Multilayer process of T-shaped transistor gates for GaAs-pseudomorphic HEMTs using e-beam resist technology and i-line negative resist with optical stepper lithography

Joachim Schneider, Fred Becker, Karlheinz Glorer, Birgit Weismann, Norbert Muenzel

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Proceedings Volume 2438, Advances in Resist Technology and Processing XII; (1995) https://doi.org/10.1117/12.210407
Event: SPIE's 1995 Symposium on Microlithography, 1995, Santa Clara, CA, United States

Abstract

A novel process for the fabrication of T-gates (mushroom gates) with a base dimension of 0.2 micrometers (gate length) and a top dimension of 0.6 micrometers is presented. We developed a two- layer resist system, in which first the bottom of the gate structure is patterned with a one-layer e-beam resist P(MMA/MAA) and then the top of the structure is patterned with an optical wafer stepper exposure and development of an experimental i-line negative resist (LMB 7011). The crosslinked bottom resist (prebake temperature 170 degree(s)C) is exposed with our Leica e-beam system EBPG-5HR. The top resist is patterned with our i-line wafer stepper ASM-L 2500/40. For this exposure we use a rim phase shift reticle to increase the resolution limit of the stepper from 0.7 to 0.5 micrometers . During exposure of the top resist, there is light reflection from the alloyed ohmic contacts (source and drain electrodes) into the unexposed region of the T-gate. To avoid this effect we use a top antireflective coating (TAR). The thickness and the prebake conditions of this TAR are very important to decrease the swing curve of the i-line negative resist. A comparison between the swing ratio with and without an antireflective coating is given. This additional layer also reduces the exposure dose of the i-line negative resist, which is very useful to get a re-entrant resist profile for the lift-off process of the gate metal. Electrical results on test devices and microwave transistors also are presented. S- parameter measurements, up to 75 GHz, were performed on T-gate transistors with our standard HEMT-structure.

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Joachim Schneider, Fred Becker, Karlheinz Glorer, Birgit Weismann, and Norbert Muenzel "Multilayer process of T-shaped transistor gates for GaAs-pseudomorphic HEMTs using e-beam resist technology and i-line negative resist with optical stepper lithography", Proc. SPIE 2438, Advances in Resist Technology and Processing XII, (9 June 1995); https://doi.org/10.1117/12.210407

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KEYWORDS

Semiconducting wafers

Photoresist processing

Transistors

Phase shifts

Reflectivity

Lithography

Reticles

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