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Boron nitride (BN) films were deposited on (001) faces of silicon (Si) using pulsed excimer laser ablation at 308 nm and 248 nm. The films were analyzed by Fourier-transform-infrared (FTIR) transmission spectroscopy, x-ray photoelectron-spectroscopy (XPS) and by x-ray diffractometry (XRD). The films are boron rich and contain hexagonal BN (h-BN). They are x-ray amorphous. So far we found no evidence for the formation of cubic BN (c-BN) crystallites in the films.
R. Schmauder,G. Dodel, andG. Bilger
"Pulsed-laser deposition of boron nitride films on silicon", Proc. SPIE 2498, Laser Methods of Surface Treatment and Modification: ALT '94 International Conference, (1 March 1995); https://doi.org/10.1117/12.203637
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R. Schmauder, G. Dodel, G. Bilger, "Pulsed-laser deposition of boron nitride films on silicon," Proc. SPIE 2498, Laser Methods of Surface Treatment and Modification: ALT '94 International Conference, (1 March 1995); https://doi.org/10.1117/12.203637