In0.53Ga0.47As Field-Effect Transistor (FETs) And PIN-FETs

R. E. Nahory; R. F. Leheny

doi:10.1117/12.965689

28 July 1981 In_0.53Ga_0.47As Field-Effect Transistor (FETs) And PIN-FETs

R. E. Nahory, R. F. Leheny

Proceedings Volume 0272, High Speed Photodetectors; (1981) https://doi.org/10.1117/12.965689
Event: 1981 Los Angeles Technical Symposium, 1980, Los Angeles, United States

Abstract

The transport properties of In0.53Ga0.47As indicate that this ternary material is a strong candidate for future FET's. Early results reported for FET's prepared from this material are reviewed and compared. The advantage of the JFET for fabrication of PIN-FET integrated optical receiver circuits is pointed out and updated results are presented for these devices. Transconductance values are presently 50 mS/mm, while work aimed at further reduction of gate dimensions is expected to yield even higher values.

Citation Download Citation

R. E. Nahory and R. F. Leheny "In_0.53Ga_0.47As Field-Effect Transistor (FETs) And PIN-FETs", Proc. SPIE 0272, High Speed Photodetectors, (28 July 1981); https://doi.org/10.1117/12.965689

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