Paper
21 May 1996 Spectroscopic multilayer film thickness measurement system
Masahiro Horie, Nariaki Fujiwara, Masahiko Kokubo, Hiroshi Kakiuchida
Author Affiliations +
Abstract
Accurate film thickness controls are indispensable for manufacturing defect-free semiconductor devices. Moreover, recent high integration requires simultaneous measurement of each film thickness and optical constants in multi-layers. This paper explains a microspectroscopic film thickness measurement system that measures film thickness at a very small spot (several micrometers in diameter) in several angstrom increments. This system also enables the user to measure film thickness on bulk wafers and SOI wafers, and determine optical constants of unknown films.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Masahiro Horie, Nariaki Fujiwara, Masahiko Kokubo, and Hiroshi Kakiuchida "Spectroscopic multilayer film thickness measurement system", Proc. SPIE 2725, Metrology, Inspection, and Process Control for Microlithography X, (21 May 1996); https://doi.org/10.1117/12.240125
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Reflectivity

Semiconducting wafers

Silicon

Spectroscopy

Lamps

Ultraviolet radiation

Multilayers

Back to Top