Internal Electroabsorption In Heterostructures: A Nondestructive Optical Method For Probing Epitaxial Layers

N. Bottka; Marian E. Hills

doi:10.1117/12.931701

30 April 1981 Internal Electroabsorption In Heterostructures: A Nondestructive Optical Method For Probing Epitaxial Layers

N. Bottka, Marian E. Hills

Author Affiliations +

Proceedings Volume 0276, Optical Characterization Techniques for Semiconductor Technology; (1981) https://doi.org/10.1117/12.931701
Event: 1981 Microlithography Conferences, 1981, San Jose, United States

Abstract

Internally reflected electroabsorption, a modulation spectroscopy tool, can be used as a nondestructive optical method to determine the gap energies and, hence, the composition of the epitaxial layers in heterostructures. At the same time, the presence of built-in inter-face potentials can also be determined. The method was used to study n-n GaAs_1-xSb_x hetero-structures grown on n_⁺GaAs substrates using a simple Schottky barrier contact.

Citation Download Citation

N. Bottka and Marian E. Hills "Internal Electroabsorption In Heterostructures: A Nondestructive Optical Method For Probing Epitaxial Layers", Proc. SPIE 0276, Optical Characterization Techniques for Semiconductor Technology, (30 April 1981); https://doi.org/10.1117/12.931701

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

;

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE