Characterization of W CMP processes for 200-mm applications

David A. Hansen; J. Sam Luo; John Nguyen; Gregory Fawley; Sue B. Davis; Lucky F. Marty; Fermion Yang

doi:10.1117/12.250873

13 September 1996 Characterization of W CMP processes for 200-mm applications

David A. Hansen, J. Sam Luo, John Nguyen, Gregory Fawley, Sue B. Davis, Lucky F. Marty, Fermion Yang

Proceedings Volume 2875, Microelectronic Device and Multilevel Interconnection Technology II; (1996) https://doi.org/10.1117/12.250873
Event: Microelectronic Manufacturing 1996, 1996, Austin, TX, United States

Abstract

This paper presents Design Of Experiment (DOE) experimental methodology used to determine W CMP process windows for 200 mm wafers using a multi-head polish system, Cybeq Systems IP 8000 polisher. A colloidal dispersed alumina nonferric nitrate slurry and concentric grooved polyurethane pad with a closed cell foam base layer, both from Rodel, were used to examine response matrices for W CMP. Removal rates, non- uniformity and metal: oxide selectivity as a function of polish head pressure and linear velocity were examined. Removal rate trends of W and PECVD oxide, non-uniformity and selectivity as a function of head pressure indicate removal rates > 2000 angstroms/minute, non-uniformity's < 5% and selectivity of W:PE-TEOS of > 10 are achievable. The optimized process obtained through DOE methodology was applied to a device wafer. The corresponding results were a non-uniformity < 2.5%, with no observable dishing, and no observable oxide erosion.

Citation Download Citation

David A. Hansen, J. Sam Luo, John Nguyen, Gregory Fawley, Sue B. Davis, Lucky F. Marty, and Fermion Yang "Characterization of W CMP processes for 200-mm applications", Proc. SPIE 2875, Microelectronic Device and Multilevel Interconnection Technology II, (13 September 1996); https://doi.org/10.1117/12.250873

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