UV laser activated digital etching of GaAs

Takashi Magyar; Yoshinobu Aoyagi

doi:10.1117/12.253114

30 September 1996 UV laser activated digital etching of GaAs

Takashi Magyar, Yoshinobu Aoyagi

Proceedings Volume 2888, Laser Processing of Materials and Industrial Applications; (1996) https://doi.org/10.1117/12.253114
Event: Photonics China '96, 1996, Beijing, China

Abstract

The self-limited etching characteristics of digital etching employing an UV laser/Cl₂GaAs system are presented. The self-limiting nature is the key mechanism and plays an important role in digital etching for obtaining etch rates independent of etching parameters. Surface processes based on photodissociation of physisorbed chlorine on GaAs with diffusion of negatively charged Cl into GaAs are also discussed.

Citation Download Citation

Takashi Magyar and Yoshinobu Aoyagi "UV laser activated digital etching of GaAs", Proc. SPIE 2888, Laser Processing of Materials and Industrial Applications, (30 September 1996); https://doi.org/10.1117/12.253114

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