High-photosensitive optical information carriers based on the avalanche phenomena of charge carrier in amorphous semiconductor

Yuri A. Cherkasov; N. B. Zakharova; Elena Lvovna Alexandrova

doi:10.1117/12.262603

27 December 1996 High-photosensitive optical information carriers based on the avalanche phenomena of charge carrier in amorphous semiconductor

Yuri A. Cherkasov, N. B. Zakharova, Elena Lvovna Alexandrova

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Proceedings Volume 2969, Second International Conference on Optical Information Processing; (1996) https://doi.org/10.1117/12.262603
Event: Second International Conference on Optical Information Processing, 1996, St. Petersburg, Russian Federation

Abstract

For amorphous analog of trigonal selenium, a avalanche phenomena in strong electric field is investigated. It is shown, that it is perspective for supersensitive optical information carriers and it is problematic for xerographical photoreceptors.

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Yuri A. Cherkasov, N. B. Zakharova, and Elena Lvovna Alexandrova "High-photosensitive optical information carriers based on the avalanche phenomena of charge carrier in amorphous semiconductor", Proc. SPIE 2969, Second International Conference on Optical Information Processing, (27 December 1996); https://doi.org/10.1117/12.262603

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