Theory of momentum orientation relaxation in semiconductors

Rolf H. Binder; Hilding Sigurd Koehler; Nai-Hang Kwong; Michael Bonitz

doi:10.1117/12.275619

6 June 1997 Theory of momentum orientation relaxation in semiconductors

Rolf H. Binder, Hilding Sigurd Koehler, Nai-Hang Kwong, Michael Bonitz

Proceedings Volume 2994, Physics and Simulation of Optoelectronic Devices V; (1997) https://doi.org/10.1117/12.275619
Event: Photonics West '97, 1997, San Jose, CA, United States

Abstract

We present numerical results for charge-carrier relaxation processes by carrier-carrier scattering in various semiconductor structures. Common to all examples is the aspect of anisotropy. Our results are based on a generalized quantum Boltzmann equation. Specifically, we solve the Kadanoff-Bayn equations for the relevant two-time Green's function. The systems under consideration are bulk GaAs with anisotropically photo-excited electrons and hexagonal CdS.

Citation Download Citation

Rolf H. Binder, Hilding Sigurd Koehler, Nai-Hang Kwong, and Michael Bonitz "Theory of momentum orientation relaxation in semiconductors", Proc. SPIE 2994, Physics and Simulation of Optoelectronic Devices V, (6 June 1997); https://doi.org/10.1117/12.275619

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