Focused-ion-beam (FIB) etching of quartz and carbon for Levenson mask repair

Hiroko Nakamura; Haruki Komano; Iwao Higashikawa

doi:10.1117/12.277284

28 July 1997 Focused-ion-beam (FIB) etching of quartz and carbon for Levenson mask repair

Hiroko Nakamura, Haruki Komano, Iwao Higashikawa

Author Affiliations +

Proceedings Volume 3096, Photomask and X-Ray Mask Technology IV; (1997) https://doi.org/10.1117/12.277284
Event: Photomask Japan '97, 1997, Kawasaki City, Japan

Abstract

The etch-back and laser-explosion process was proposed and reported for Levenson mask repair before. If convex defects and leveling film were etched by physical sputtering and remaining leveling film was removed by laser explosion in the etch-back and laser-explosion process, quartz (Qz) substrate was over-etched because the Ga implanted layer of Qz substrate was also removed by the laser explosion due to the transmittance decrease of the Ga implanted layer. In this paper, gas assisted etching with the mixture of XeF₂ and O₂ was applied to the etch-back and laser-explosion process. The coincident etching rate of Qz (phase shifter) with C film was obtained, which is an indispensable requirement for the etch-back process. The optical transmittance of Qz substrate after the repair was 95% for the light of 250 nm wavelength. The transmittance was sufficient to avoid over-etching of Qz substrate.

Citation Download Citation

Hiroko Nakamura, Haruki Komano, and Iwao Higashikawa "Focused-ion-beam (FIB) etching of quartz and carbon for Levenson mask repair", Proc. SPIE 3096, Photomask and X-Ray Mask Technology IV, (28 July 1997); https://doi.org/10.1117/12.277284

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