Proximity effect correction for reticle fabrication

Takashi Kamikubo; Takayuki Abe; Susumu Oogi; Hirohito Anze; Mitsuko Shimizu; Masamitsu Itoh; Tetsuro Nakasugi; Tomohiro Iijima; Yoshiaki Hattori

doi:10.1117/12.277291

28 July 1997 Proximity effect correction for reticle fabrication

Takashi Kamikubo, Takayuki Abe, Susumu Oogi, Hirohito Anze, Mitsuko Shimizu, Masamitsu Itoh, Tetsuro Nakasugi, Tomohiro Iijima, Yoshiaki Hattori

Author Affiliations +

Proceedings Volume 3096, Photomask and X-Ray Mask Technology IV; (1997) https://doi.org/10.1117/12.277291
Event: Photomask Japan '97, 1997, Kawasaki City, Japan

Abstract

Proximity effect correction is a key technology for fabricating reticles by electron beam writing systems. To write patterns of 1 Gbit or higher-capacity DRAMs, the dimensional accuracy required for the correction is better than about 10 nm. Conventional methods do not have sufficient accuracy at the position where pattern density changes sharply. We propose a new correction method with higher accuracy for various patterns and show that we can achieve corrections accurate to about 5 nm.

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Takashi Kamikubo, Takayuki Abe, Susumu Oogi, Hirohito Anze, Mitsuko Shimizu, Masamitsu Itoh, Tetsuro Nakasugi, Tomohiro Iijima, and Yoshiaki Hattori "Proximity effect correction for reticle fabrication", Proc. SPIE 3096, Photomask and X-Ray Mask Technology IV, (28 July 1997); https://doi.org/10.1117/12.277291

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