Luminescent Ge nanocrystallites embedded in a-SiO2 films

Zhenhong He; Kun-Ji Chen; Jun Xu; Duan Feng; He Xiang Han; Zhao-Ping Wang

doi:10.1117/12.300692

20 February 1998 Luminescent Ge nanocrystallites embedded in a-SiO2 films

Zhenhong He, Kun-Ji Chen, Jun Xu, Duan Feng, He Xiang Han, Zhao-Ping Wang

Author Affiliations +

Proceedings Volume 3175, Third International Conference on Thin Film Physics and Applications; (1998) https://doi.org/10.1117/12.300692
Event: Third International Conference on Thin Film Physics and Applications, 1997, Shanghai, China

Abstract

The luminescent nanocrystal Ge embedded in a-SiO₂ matrix was prepared by thermal oxidation of a-Si_1-xGe_x:H films under conventional conditions. It was found that nc-Ge were formed through the selective oxidation of Si in a-Ge_xSi_1-x:H alloys and precipitation of Ge during oxidation. The average size of nc-Ge changed from 4 nm to 6 nm with the various conditions and Ge contents. Visible photoluminescence with peak energy 2.2 eV was observed from the oxidized samples where the nc-Ge have an average size of 4 nm. In order to control the size distribution of nc-Ge, we used multilayer films of a-Si:H/a-Si_1-xGe_x:H instead of unlayered a-Si_1-xGe_x:H alloy films to prepare nc-Ge embedded in SiO₂ matrix. We found that the size of nc-Ge in perpendicular direction can be well confined by the SiO₂ sublayers simultaneously formed.

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Zhenhong He, Kun-Ji Chen, Jun Xu, Duan Feng, He Xiang Han, and Zhao-Ping Wang "Luminescent Ge nanocrystallites embedded in a-SiO2 films", Proc. SPIE 3175, Third International Conference on Thin Film Physics and Applications, (20 February 1998); https://doi.org/10.1117/12.300692

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