High-power pulse-electron beam modification and ion implantation of Hg1-xCdxTe epitaxial structures

Aleksander V. Voitsekhovskii; Andrej P. Kokhanenko; Yu. A. Denisov; D. A. Oucherenko; Gennady E. Remnev; Mikhail S. Opekunov

doi:10.1117/12.280460

26 August 1997 High-power pulse-electron beam modification and ion implantation of Hg_1-xCd_xTe epitaxial structures

Aleksander V. Voitsekhovskii, Andrej P. Kokhanenko, Yu. A. Denisov, D. A. Oucherenko, Gennady E. Remnev, Mikhail S. Opekunov

Author Affiliations +

Proceedings Volume 3182, Material Science and Material Properties for Infrared Optoelectronics; (1997) https://doi.org/10.1117/12.280460
Event: Material Science and Material Properties for Infrared Optoelectronics, 1996, Uzhgorod, Ukraine

Abstract

Hg_1-xCd_xTe(MCT) samples epitaxial structures are irradiated by pulse electron beams under the doze 10¹³- 10¹⁷ cm^-2. Electron beams have the next parameters: 500 eV energy electron ; 200 keV energy electron. Electroconductivity and recombination of modified samples are investigated by Hall effect and photoconductivity methods. For 200 keV electron energy beam irradiation of the n-type surface regions have been obtained under threshold mechanisms of donor defect generation.FOr 500 keV electron energy beam irradiation the maximum value of charge carrier lifetimes occur in p- to n-type conductivity conversion range for the initial p-type crystals due to the conductivity compensation. MCT samples are implanted by Al ions under the dose 10¹²-10¹⁶ cm^-2. Ion beams have the next parameters: (1-10) A/cm² ion current density; (100-200) ns current pulse; (150-450) keV Al ion. The ion distribution and doping profiles were investigated by PIGE and Hall effect methods. The comparison between MCT samples after power pulse ion implantation and after standard ion implantation demonstrate a difference in ion distribution, doping profiles and defect formation radiation mechanisms.

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Aleksander V. Voitsekhovskii, Andrej P. Kokhanenko, Yu. A. Denisov, D. A. Oucherenko, Gennady E. Remnev, and Mikhail S. Opekunov "High-power pulse-electron beam modification and ion implantation of Hg_1-xCd_xTe epitaxial structures", Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); https://doi.org/10.1117/12.280460

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KEYWORDS

Ion implantation

Ions

Aluminum

Doping

Electron beams

Cadmium

Crystals

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