Dark current in GaAs/AlxGa1-xAs quantum well infrared detectors

Vaidya Nathan; Danhong Huang

doi:10.1117/12.345359

2 January 1998 Dark current in GaAs/Al_xGa_1-xAs quantum well infrared detectors

Vaidya Nathan, Danhong Huang

Proceedings Volume 3211, International Conference on Fiber Optics and Photonics: Selected Papers from Photonics India '96; (1998) https://doi.org/10.1117/12.345359
Event: International Conference on Fiber Optics and Photonics: Selected Papers from Photonics India '96, 1996, Madras, India

Abstract

New formulas are derived to calculate the tunneling and thermionic dark currents in GaAs/Alx Ga1-xAs quantum well infrared detectors. Variation of the dark current (Id) with barrier width and doping density is systematically studied. It is shown that increasing the barrier width and/or decreasing the doping density in the well do not always reduce the dark current. Theoretical variation of Id with bias is compared with experimental data.

Citation Download Citation

Vaidya Nathan and Danhong Huang "Dark current in GaAs/Al_xGa_1-xAs quantum well infrared detectors", Proc. SPIE 3211, International Conference on Fiber Optics and Photonics: Selected Papers from Photonics India '96, (2 January 1998); https://doi.org/10.1117/12.345359

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