Potential of rf Si-MOS LSI technology

Akira Matsuzawa

doi:10.1117/12.284580

27 August 1997 Potential of rf Si-MOS LSI technology

Akira Matsuzawa

Proceedings Volume 3212, Microelectronic Device Technology; (1997) https://doi.org/10.1117/12.284580
Event: Microelectronic Manufacturing, 1997, Austin, TX, United States

Abstract

This paper reviews and discusses a potential of Si-MOS rf technology, focusing on the fundamental rf characteristics, such as f_(tau ), fmax, noise, and linearity, also identical rf circuits, such as low noise amplifier, mixer, and oscillator.

Citation Download Citation

Akira Matsuzawa "Potential of rf Si-MOS LSI technology", Proc. SPIE 3212, Microelectronic Device Technology, (27 August 1997); https://doi.org/10.1117/12.284580

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