Reliability and degradation characteristics of semiconductor AlGaAs-based diode lasers operating between ~ 0.81 and 1.0 mm

Stephen O'Brien; Erik P. Zucker; Benjamin Li; Hanmin Zhao

doi:10.1117/12.307024

20 April 1998 Reliability and degradation characteristics of semiconductor AlGaAs-based diode lasers operating between ~ 0.81 and 1.0 mm

Stephen O'Brien, Erik P. Zucker, Benjamin Li, Hanmin Zhao

Author Affiliations +

Proceedings Volume 3244, Laser-Induced Damage in Optical Materials: 1997; (1998) https://doi.org/10.1117/12.307024
Event: Laser-Induced Damage in Optical Materials: 1997, 1997, Boulder, CO, United States

Abstract

High power diode lasers are important for a variety of applications including diode-pumped (DP) solid state lasers, DP fiber lasers/amplifiers and a variety of printing and medical applications. Recently, there have been significant advances in the maximum cw powers achieved from both multimode and singlemode lasers in both AlGaAs-based and InGaAsP- based materials. The highest powers from broad area lasers have been achieved with high quality AlGaAs-based materials. For example, cw powers of 11.3 and 16.5 W have been demonstrated at 870 nm from 100 and 200 micrometers wide apertures, respectively. These power levels correspond to a facet loading of 80-110 mW/micrometers and facet power densities of 27 MW/cm² which are approximately 2-fold higher than previously reported results. In this paper we report on the performance, reliability and degradation characteristics of AlGaAs- based lasers.

Citation Download Citation

Stephen O'Brien, Erik P. Zucker, Benjamin Li, and Hanmin Zhao "Reliability and degradation characteristics of semiconductor AlGaAs-based diode lasers operating between ~ 0.81 and 1.0 mm", Proc. SPIE 3244, Laser-Induced Damage in Optical Materials: 1997, (20 April 1998); https://doi.org/10.1117/12.307024

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