InAs/Ga1-xInxSb infrared superlattice photodiodes for infrared detection

Frank Fuchs; U. Weimar; E. Ahlswede; Wilfried Pletschen; J. Schmitz; Martin Walther

doi:10.1117/12.304477

8 April 1998 InAs/Ga_1-xIn_xSb infrared superlattice photodiodes for infrared detection

Frank Fuchs, U. Weimar, E. Ahlswede, Wilfried Pletschen, J. Schmitz, Martin Walther

Author Affiliations +

Proceedings Volume 3287, Photodetectors: Materials and Devices III; (1998) https://doi.org/10.1117/12.304477
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

Electric and optical properties of IR photodiodes based on InAs/(GaIn)Sb superlattices were investigations. Mesa diodes were fabricated with cut-off wavelengths ranging from 7.5 to 12 micrometers , showing 77 K detectivities between 1 X 10¹² cmHz^0.5/W and 5 X 10¹⁰ cmHz^0.5/W, respectively. At least two leakage current mechanisms are observed in the reverse bias branch of the current-voltage characteristics. At high reverse bias band-to-band tunneling currents dominate. Close to zero voltage surface leakage currents become important. The leakage currents are studied with gate controlled mesa diodes, allowing depletion or inversion of the mesa side walls. In addition, the band-to- band tunneling currents are investigated by applying magnetic fields oriented parallel and perpendicular to the electric field across the p-n junction of the diode.

Citation Download Citation

Frank Fuchs, U. Weimar, E. Ahlswede, Wilfried Pletschen, J. Schmitz, and Martin Walther "InAs/Ga_1-xIn_xSb infrared superlattice photodiodes for infrared detection", Proc. SPIE 3287, Photodetectors: Materials and Devices III, (8 April 1998); https://doi.org/10.1117/12.304477

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