Accurate proximity correction method with total-process proximity-based correction factor (TCF)

Kohji Hashimoto; Satoshi Usui; Shigeru Hasebe; Masayuki Murota; Takeo Nakayama; Fumitomo Matsuoka; Soichi Inoue; Sachiko Kobayashi; Kazuko Yamamoto

doi:10.1117/12.310752

29 June 1998 Accurate proximity correction method with total-process proximity-based correction factor (TCF)

Kohji Hashimoto, Satoshi Usui, Shigeru Hasebe, Masayuki Murota, Takeo Nakayama, Fumitomo Matsuoka, Soichi Inoue, Sachiko Kobayashi, Kazuko Yamamoto

Author Affiliations +

Proceedings Volume 3334, Optical Microlithography XI; (1998) https://doi.org/10.1117/12.310752
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

A novel, accurate, one-dimensional process proximity correction method is proposed. The method is based on the relationship between a line width variation and the bias which should be corrected. This relationship is characterized by the Total process proximity-based Correction Factor (TCF) which is defined as the slope of the wafer CD variation curve to the mask design CD under a constant pattern pitch condition. At a TCF greater than 1, patterns should be corrected with values less than the line width deviation. By applying the new PPC method to 0.25 micrometer logic gate patterns, a correction rule table was experimentally obtained. The new PPC mask fabricated with the correction rule exhibited a significant improvement over the conventional correction technique in the logic device.

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Kohji Hashimoto, Satoshi Usui, Shigeru Hasebe, Masayuki Murota, Takeo Nakayama, Fumitomo Matsuoka, Soichi Inoue, Sachiko Kobayashi, and Kazuko Yamamoto "Accurate proximity correction method with total-process proximity-based correction factor (TCF)", Proc. SPIE 3334, Optical Microlithography XI, (29 June 1998); https://doi.org/10.1117/12.310752

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