Paper
29 June 1998 Characterization of a next-generation step-and-scan system
Timothy J. Wiltshire, Joseph P. Kirk, Donald C. Wheeler, Christopher Obszarny, James T. Marsh, Donald M. Odiwo
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Abstract
Deep-ultaviolet (DUV) step-and-scan projection systems have been increasing in semiconductor manufacturing importance in recent years. IBM and other semiconductor manufacturers have made substantial use of 0.50 numerical aperture (NA) step-and- scan systems for production resolutions down to approximately 250 nm resolution. This paper describes the initial system characterization and product performance of a next generation, 0.60 NA scanner system in early semiconductor production.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Timothy J. Wiltshire, Joseph P. Kirk, Donald C. Wheeler, Christopher Obszarny, James T. Marsh, and Donald M. Odiwo "Characterization of a next-generation step-and-scan system", Proc. SPIE 3334, Optical Microlithography XI, (29 June 1998); https://doi.org/10.1117/12.310773
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KEYWORDS
Overlay metrology

Metals

Optical alignment

Semiconducting wafers

Image processing

Deep ultraviolet

Metrology

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