Heterojunction field effect transistors (HJFETs) for a readout circuit of a cryogenically cooled far-infrared detector

Iwao Hosako; Kenichi Okumura; Yukari Yamashita-Yui; Makoto Akiba; Norihisa Hiromoto

doi:10.1117/12.317310

21 August 1998 Heterojunction field effect transistors (HJFETs) for a readout circuit of a cryogenically cooled far-infrared detector

Iwao Hosako, Kenichi Okumura, Yukari Yamashita-Yui, Makoto Akiba, Norihisa Hiromoto

Author Affiliations +

Proceedings Volume 3354, Infrared Astronomical Instrumentation; (1998) https://doi.org/10.1117/12.317310
Event: Astronomical Telescopes and Instrumentation, 1998, Kona, HI, United States

Abstract

Deep cryogenic field effect transistors (FETs) which are able to operate under liquid helium temperatures have significant advantages over conventional cryogenic Silicon- Junction-FETs or Si-metal-oxide-semiconductor-FETs as readout circuits of a far-IR focal plane array detector: simple operation, simple system structures, and large transconductance. We report the testing of an InGaAs-channel heterojunction field effect transistor (HJFET) operating at 4.2 K designed for a readout circuit of a cryogenically cooled far-IR detector. In this report, we present current- voltage characteristics, transconductance, low-frequency noise (LFN) characteristics, and the influence of the gate leakage current on the LFN characteristics of the HJFET. Input-referred noise voltage as low as a few hundred nanovolts at 1 Hz was measured for the HJFET with a 100 X 100 micrometers ² gate area. We discuss further possibilities for the fabrication of HJFETs with an extremely small input current of less than 10^-15 A.

Citation Download Citation

Iwao Hosako, Kenichi Okumura, Yukari Yamashita-Yui, Makoto Akiba, and Norihisa Hiromoto "Heterojunction field effect transistors (HJFETs) for a readout circuit of a cryogenically cooled far-infrared detector", Proc. SPIE 3354, Infrared Astronomical Instrumentation, (21 August 1998); https://doi.org/10.1117/12.317310

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