Optical characterization of As40S40Se20 inorganic resist

Alexander V. Stronski; Miroslav Vlcek; Peter E. Shepeljavi; Apollinary I. Stetsun

doi:10.1117/12.306248

20 April 1998 Optical characterization of As₄₀S₄₀Se₂₀ inorganic resist

Alexander V. Stronski, Miroslav Vlcek, Peter E. Shepeljavi, Apollinary I. Stetsun

Proceedings Volume 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997; (1998) https://doi.org/10.1117/12.306248
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1997, Kiev, Ukraine

Abstract

The results of investigations of photostimulated phenomena in As₄₀S₄₀Se₂₀ thin films with the help of optical methods are presented in this paper. Raman spectra, optical constants in the transparency region of as- evaporated, exposed and annealed films were obtained. The As₄₀S₄₀Se₂₀ thin films have shown good etching selectivity in amine based (in particular, nonaqueous solutions based on triethylamine) etching solutions.

Citation Download Citation

Alexander V. Stronski, Miroslav Vlcek, Peter E. Shepeljavi, and Apollinary I. Stetsun "Optical characterization of As₄₀S₄₀Se₂₀ inorganic resist", Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, (20 April 1998); https://doi.org/10.1117/12.306248

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