Paper
20 April 1998 Photoluminescent investigations of SHF irradiation effect on defect states in GaAs:Sn(Te) and InP crystals
Irene B. Ermolovich, Evgenie F. Venger, Raisa V. Konakova, Viktor V. Milenin, Sergey V. Svechnikov, Mihail V. Sheveljev
Author Affiliations +
Proceedings Volume 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997; (1998) https://doi.org/10.1117/12.306225
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1997, Kiev, Ukraine
Abstract
Results of investigations of magnetron and hyrotron irradiations effects on spectra of local states to be formed by intrinsic and impurity point structure defects in nearsurface layers of GaAs:Sn (111), GaAs:Sn (100), GaAs:Te (111) and InP (100) have been studied and discussed. The effect of SHF irradiation on defect states in GaAs and InP has been obtained to depend on both the type of doped impurity and the orientation of sample surface. The important role of intrinsic vacancies in processes of rebuilding point and complex defects in nearsurface layers has been established. The gettering action of SHF- irradiation on point defects and the increase of homogeneity of SHF-irradiated crystals have been found. The mechanisms of SHF-fields and semiconductor compounds interactions are discussed.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Irene B. Ermolovich, Evgenie F. Venger, Raisa V. Konakova, Viktor V. Milenin, Sergey V. Svechnikov, and Mihail V. Sheveljev "Photoluminescent investigations of SHF irradiation effect on defect states in GaAs:Sn(Te) and InP crystals", Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, (20 April 1998); https://doi.org/10.1117/12.306225
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KEYWORDS
Crystals

Gallium arsenide

Semiconductor materials

Tin

Semiconducting wafers

Semiconductors

Annealing

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