Defects in HgCdTe crystals grown by SSR technique

Yue Wang; Quanbao Li; Qingling Han; Bingwen Song; Wanqi Jie; Yaohe Zhou

doi:10.1117/12.318058

11 August 1998 Defects in HgCdTe crystals grown by SSR technique

Yue Wang, Quanbao Li, Qingling Han, Bingwen Song, Wanqi Jie, Yaohe Zhou

Proceedings Volume 3553, Detectors, Focal Plane Arrays, and Imaging Devices II; (1998) https://doi.org/10.1117/12.318058
Event: Photonics China '98, 1998, Beijing, China

Abstract

HgCdTe is a very important material for IR detector. The solid state recrystallization (SSR) is a very useful method to prepare HgCdTe single crystal. The defects in as-grown HgCdTe crystals grown by SSR method are introduced, the relationship between cause of resulting in these defects and crystal growth process is discussed simply in this paper. The research results have shown: if raw material purity is raised, stoichiometry is suitable and quench process is improved, the defects in HgCdTe crystals can be reduced and the quality of as-grown HgCdTe crystals can be improved.

Citation Download Citation

Yue Wang, Quanbao Li, Qingling Han, Bingwen Song, Wanqi Jie, and Yaohe Zhou "Defects in HgCdTe crystals grown by SSR technique", Proc. SPIE 3553, Detectors, Focal Plane Arrays, and Imaging Devices II, (11 August 1998); https://doi.org/10.1117/12.318058

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