Spectral mapping of multimode vertical-cavity surface-emitting lasers by near-field scanning optical microscopy

Kevin J. Knopp; David H. Christensen; Greg H. Vander Rhodes; Josh M. Pomeroy; Bennett B. Goldberg; M. Selim Unlu

doi:10.1117/12.345431

14 April 1999 Spectral mapping of multimode vertical-cavity surface-emitting lasers by near-field scanning optical microscopy

Kevin J. Knopp, David H. Christensen, Greg H. Vander Rhodes, Josh M. Pomeroy, Bennett B. Goldberg, M. Selim Unlu

Author Affiliations +

Proceedings Volume 3626, Testing, Packaging, Reliability, and Applications of Semiconductor Lasers IV; (1999) https://doi.org/10.1117/12.345431
Event: Optoelectronics '99 - Integrated Optoelectronic Devices, 1999, San Jose, CA, United States

Abstract

We have studied the spatial and spectral characteristics of vertical-cavity surface-emitting laser emission using near- field scanning optical microscopy. We report the multi- transverse-mode characteristics of 15 micrometers diameter proton- implanted 850 nm devices used in a 2 Gbit/s multimode fiber- optic links. Spectrally resolved and integrated intensity scans over a 20 X 20 area were performed. The intensity of each resolvable transverse mode was integrated and its wavelength range false-colored at each scan position. The resulting composite image displays relative intensity and spatial distribution information for each transverse mode. Correlation with the shear force data allows mapping of the optical distributions to topographical features. Lasing filaments were observed at high drive currents. Gain competition among spatially overlapping transverse modes was observed while spatially isolated modes coexisted without competition.

Citation Download Citation

Kevin J. Knopp, David H. Christensen, Greg H. Vander Rhodes, Josh M. Pomeroy, Bennett B. Goldberg, and M. Selim Unlu "Spectral mapping of multimode vertical-cavity surface-emitting lasers by near-field scanning optical microscopy", Proc. SPIE 3626, Testing, Packaging, Reliability, and Applications of Semiconductor Lasers IV, (14 April 1999); https://doi.org/10.1117/12.345431

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