SiON-based antireflective coating for 193-nm lithography

Patrick Schiavone; C. Esclope; A. Halimaoui

doi:10.1117/12.350160

11 June 1999 SiON-based antireflective coating for 193-nm lithography

Patrick Schiavone, C. Esclope, A. Halimaoui

Author Affiliations +

Proceedings Volume 3678, Advances in Resist Technology and Processing XVI; (1999) https://doi.org/10.1117/12.350160
Event: Microlithography '99, 1999, Santa Clara, CA, United States

Abstract

Silicon oxynitride has been shown to be an efficient antireflective materials at 365 and 248 nm. In this paper, we confirm that SiON can be used successfully at 193nm. SiON is deposited at low substrate temperature in a Plasma Enhanced Chemical Vapor Deposition reactor using silane and nitrous oxide as precursor gases. Compatibility of the silicon oxynitride underlayer with sensitive chemically amplified resist is examined. A simple surface treatment is shown to give very good results and almost completely suppresses any contamination of the chemically amplified resist.

Citation Download Citation

Patrick Schiavone, C. Esclope, and A. Halimaoui "SiON-based antireflective coating for 193-nm lithography", Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); https://doi.org/10.1117/12.350160

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