Spectral, kinetic, and electrical properties of electroluminescent thin-film cells based on ZnS:Mn

Eugeniusz Chimczak; Miroslawa Bertrandt-Zytkowiak; Agnieszka Szczepanik; Grzegorz Chimczak

doi:10.1117/12.344731

8 April 1999 Spectral, kinetic, and electrical properties of electroluminescent thin-film cells based on ZnS:Mn

Eugeniusz Chimczak, Miroslawa Bertrandt-Zytkowiak, Agnieszka Szczepanik, Grzegorz Chimczak

Proceedings Volume 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology; (1999) https://doi.org/10.1117/12.344731
Event: International Conference on Solid State Crystals '98, 1998, Zakopane, Poland

Abstract

Two kinds of the electroluminescent cells containing Cu_xS-ZnS:Mn junction were investigated. In the first cells the Cu_xS layer was produced by wet chemical dipping method. In the second ones the layer was produced by thermal evaporation of the mixture of CuCl and ZnS. Both the cells exhibit characteristic yellow-orange manganese luminescence but luminescence intensity in the long wavelength side of the manganese band is greater for the second kind of the cells. This observation is in good agreement with our previous results, confirming existence of the structure of manganese band. Kinetic measurements show that luminescence lifetime of single as well as paired manganese centers are longer for the cells due to the second kind of the technological process. Also memory effect observed in current-voltage characteristics is larger for the cells.

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Eugeniusz Chimczak, Miroslawa Bertrandt-Zytkowiak, Agnieszka Szczepanik, and Grzegorz Chimczak "Spectral, kinetic, and electrical properties of electroluminescent thin-film cells based on ZnS:Mn", Proc. SPIE 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (8 April 1999); https://doi.org/10.1117/12.344731

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