Paper
7 May 1999 Novel film sensor based on p-polarized reflectance
Zhengtian Gu, Peihui Liang, Xiaolin Liu, Weiqing Zhang
Author Affiliations +
Proceedings Volume 3740, Optical Engineering for Sensing and Nanotechnology (ICOSN '99); (1999) https://doi.org/10.1117/12.347765
Event: Optical Engineering for Sensing and Nanotechnology (ICOSN '99), 1999, Yokohama, Japan
Abstract
A new scheme of sensor is presented in this paper. The optimization of parameters of the sensor is carried out for designing optical sensor with high sensitivity. By data simulation, the resolutions of nf, kf and df of the film sensor are predicted to be less than 10-7, 10-5, 10-3 nm, respectively. The optical parameters of sol-gel SnO2 film were measured under different dip rates and annealing temperatures, and the sensitivity to the gas C3H8 was investigated. The results indicate that the detection limit is available to 10-1 ppm on the condition of optimum optical parameter and incident angle.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zhengtian Gu, Peihui Liang, Xiaolin Liu, and Weiqing Zhang "Novel film sensor based on p-polarized reflectance", Proc. SPIE 3740, Optical Engineering for Sensing and Nanotechnology (ICOSN '99), (7 May 1999); https://doi.org/10.1117/12.347765
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KEYWORDS
Sensors

Reflectivity

Refractive index

Annealing

Glasses

Ellipsometry

Optical design

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