Effect of photoresist contrast on intrafield critical dimensions in sub-half-micron optical lithography

Christine Wallace; Brian Martin; Graham G. Arthur

doi:10.1117/12.346896

28 April 1999 Effect of photoresist contrast on intrafield critical dimensions in sub-half-micron optical lithography

Christine Wallace, Brian Martin, Graham G. Arthur

Proceedings Volume 3741, Lithography for Semiconductor Manufacturing; (1999) https://doi.org/10.1117/12.346896
Event: Microelectronic Manufacturing Technologies, 1999, Edinburgh, United Kingdom

Abstract

Resist contrast is related to usable depth-of-focus (UDOF) for I-line and DUV stepper lenses through the resists process linearity function. Results, supported by simulations in the resist image, show that stepper field center-edge critical dimensional offsets, which decrease UDOF, increase as resist contrast decreases. Measurements on intra-field CDs show that their uniformity decreases as processes reach non-linear processing regimes.

Citation Download Citation

Christine Wallace, Brian Martin, and Graham G. Arthur "Effect of photoresist contrast on intrafield critical dimensions in sub-half-micron optical lithography", Proc. SPIE 3741, Lithography for Semiconductor Manufacturing, (28 April 1999); https://doi.org/10.1117/12.346896

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available