Development of 256x256 GaN ultraviolet imaging arrays

Ted Z. C. Huang; David Brent Mott; Anh T. La

doi:10.1117/12.371089

25 November 1999 Development of 256x256 GaN ultraviolet imaging arrays

Ted Z. C. Huang, David Brent Mott, Anh T. La

Author Affiliations +

Proceedings Volume 3764, Ultraviolet and X-Ray Detection, Spectroscopy, and Polarimetry III; (1999) https://doi.org/10.1117/12.371089
Event: SPIE's International Symposium on Optical Science, Engineering, and Instrumentation, 1999, Denver, CO, United States

Abstract

We have successfully developed a prototype 256 X 256 photoconductive GaN ultraviolet (UV) imaging array. The array, with its pixels (30 X 30 micrometer²) indium bump bonded to a Lockheed Martin Fairchild Systems LT9601 readout integrated circuit, is highly sensitive to ultraviolet light below 365 nm with a sharp reduction in response to visible and infrared light. The array was installed into a custom designed UV camera utilizing a Nikon UV lens with all the off-chip electronics interfaced to an automatic computer controlled system. To the best of our knowledge, this is the first reported UV array camera based on the nitride materials.

Citation Download Citation

Ted Z. C. Huang, David Brent Mott, and Anh T. La "Development of 256x256 GaN ultraviolet imaging arrays", Proc. SPIE 3764, Ultraviolet and X-Ray Detection, Spectroscopy, and Polarimetry III, (25 November 1999); https://doi.org/10.1117/12.371089

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