High-performance 480x12x4 linear CMOS IR multiplexer

Charles F. Walmsley; Timothy R. Beystrum; Charles Glasser; Ray Himoto; Mark K. Preis; Dave Parkinson

doi:10.1117/12.366738

26 October 1999 High-performance 480x12x4 linear CMOS IR multiplexer

Charles F. Walmsley, Timothy R. Beystrum, Charles Glasser, Ray Himoto, Mark K. Preis, Dave Parkinson

Proceedings Volume 3794, Materials and Electronics for High-Speed and Infrared Detectors; (1999) https://doi.org/10.1117/12.366738
Event: SPIE's International Symposium on Optical Science, Engineering, and Instrumentation, 1999, Denver, CO, United States

Abstract

This paper describes a linear CMOS IR multiplexer comprising four spectral bands, each with 480 channels of 12 TDI elements. The multiplexer is designed to interface with high R₀A InSb detectors manufactured by Litton EOS, Tempe, AZ. The requirement to handle a wide range of photocurrents down to 100 fA, yet maintaining a signal bandwidth in excess of 2.5 kHz imposed significant demands on the input buffer amplifier design. In addition, each detector cell incorporates a sample/hold stage to allow snapshot operation mode. These features lead to a challenging layout for the 32 micrometers pitch to be met. To optimize dynamic range, each band may be independently operated with one of three gain settings set by switchable capacitors within the unit cell. Other architectural features of the array include bi- directional scanning, externally controllable integration time and electrical test. The array dissipates less than 50 mW of power and exhibits less than 65 noise electrons at high gain setting. A 0.7 micrometers silicon technology was used. Special design techniques were employed to allow operation at 7.5 V, thereby enhancing dynamic range. IR cameras incorporating the multiplexer are currently being delivered to the customer.

Citation Download Citation

Charles F. Walmsley, Timothy R. Beystrum, Charles Glasser, Ray Himoto, Mark K. Preis, and Dave Parkinson "High-performance 480x12x4 linear CMOS IR multiplexer", Proc. SPIE 3794, Materials and Electronics for High-Speed and Infrared Detectors, (26 October 1999); https://doi.org/10.1117/12.366738

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