Crystallization behavior of sputter-deposited nitrogren-doped amorphous Ge2Sb2Te5 thin films

Hun Seo; TaeHee Jeong; Jeong-Woo Park; Cheong Yeon; Dong Cheol Lee; Sang J. Kim; Han-jo Lim

doi:10.1117/12.997570

28 June 1999 Crystallization behavior of sputter-deposited nitrogren-doped amorphous Ge₂Sb₂Te₅ thin films

Hun Seo, TaeHee Jeong, Jeong-Woo Park, Cheong Yeon, Dong Cheol Lee, Sang J. Kim, Han-jo Lim

Proceedings Volume 3864, Joint International Symposium on Optical Memory and Optical Data Storage 1999; 386410 (1999) https://doi.org/10.1117/12.997570
Event: Optical Data Storage, 1999, Kauai, HI, United States

Abstract

Recently, the demand of high-speed and high-density optical recording media using a direct overwrite scheme is very high.

Citation Download Citation

Hun Seo, TaeHee Jeong, Jeong-Woo Park, Cheong Yeon, Dong Cheol Lee, Sang J. Kim, and Han-jo Lim "Crystallization behavior of sputter-deposited nitrogren-doped amorphous Ge₂Sb₂Te₅ thin films", Proc. SPIE 3864, Joint International Symposium on Optical Memory and Optical Data Storage 1999, 386410 (28 June 1999); https://doi.org/10.1117/12.997570

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