Epitaxial Processes For Multilayer Electronic Device Structures

P. Daniel Dapkus

doi:10.1117/12.934988

8 November 1983 Epitaxial Processes For Multilayer Electronic Device Structures

P. Daniel Dapkus

Proceedings Volume 0387, Technology of Stratified Media; (1983) https://doi.org/10.1117/12.934988
Event: 1983 Los Angeles Technical Symposium, 1983, Los Angeles, United States

Abstract

A review of materials technologies for the growth of multilayer device structures is given. It is concluded that new device structures employing ultrathin layers and abrupt interfaces will be grown by metalorganic chemical vapor deposition (MOCVD) or by molecular beam epitaxy (MBE).

Citation Download Citation

P. Daniel Dapkus "Epitaxial Processes For Multilayer Electronic Device Structures", Proc. SPIE 0387, Technology of Stratified Media, (8 November 1983); https://doi.org/10.1117/12.934988

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