Paper
30 August 1999 Fabrication and reliability testing of Ti/TiN heaters
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Proceedings Volume 3874, Micromachining and Microfabrication Process Technology V; (1999) https://doi.org/10.1117/12.361232
Event: Symposium on Micromachining and Microfabrication, 1999, Santa Clara, CA, United States
Abstract
We present a new material for highly resistive heaters: thin Ti/TiN layers. Their resistivity is indeed comparable to the resistivity of NiCr, i.e. 50-100 micro-Ohn-cm. However, as opposed to the latter material, Ti/TiN is CMOS compatible and thus easier to incorporate in CMOS integrated MEMS processing. To test the reliability of thin Ti/TiN resistive heaters, both 5 nm Ti/30 nm TiN and 5 nm Ti/60 nm TiN heaters were fabricated. A thermal analysis shows a small temperature coefficient of resistivity. To test the reliability of such heaters at temperatures up to 300 degrees C, 1 micron wide Ti/TiN lines were biased using high currents. Both DC and pulsed DC current stressing resulted in very small deviations from the initial resistance for sintered and passivated heaters. The temperature uniformity over the heater line is investigated using Emission Microscopy.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Piet De Moor, Ann Witvrouw, Veerle Simons, and Ingrid De Wolf "Fabrication and reliability testing of Ti/TiN heaters", Proc. SPIE 3874, Micromachining and Microfabrication Process Technology V, (30 August 1999); https://doi.org/10.1117/12.361232
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Cited by 16 scholarly publications.
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KEYWORDS
Resistance

Tin

Semiconducting wafers

Reliability

Temperature metrology

Microscopy

Resistors

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