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This paper reviews work to integrate FlowfillTM planarizing dielectric with ForcefillTM aluminum plug in a 0.5/0.35 micrometers CMOS design. Work to reduce dielectric cracking by modifying the stress of the IMD material is described. The paper discusses liner choice for the ForcefillTM interconnect and how it can influence lithography accuracy, line resistance and electromigration. The use of via chain resistance as a test to determine the degree of metal hole-fill is described.
Werner K. Robl,Juergen Foerster,Uwe Hoeckele,Manfred Frank,David Butler,Paul Rich, andK. Beekmann
"Integration of Flowfill and Forcefill for cost-effective via applications", Proc. SPIE 3883, Multilevel Interconnect Technology III, (11 August 1999); https://doi.org/10.1117/12.360573
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Werner K. Robl, Juergen Foerster, Uwe Hoeckele, Manfred Frank, David Butler, Paul Rich, K. Beekmann, "Integration of Flowfill and Forcefill for cost-effective via applications," Proc. SPIE 3883, Multilevel Interconnect Technology III, (11 August 1999); https://doi.org/10.1117/12.360573