Paper
29 September 1999 Self-biased transconductance amplifier
Gilles Amendola, Yves Blanchard, Anne Exertier, Serge Spirkovitch, Guo Neng Lu, George Alquie
Author Affiliations +
Proceedings Volume 3891, Electronics and Structures for MEMS; (1999) https://doi.org/10.1117/12.364455
Event: Asia Pacific Symposium on Microelectronics and MEMS, 1999, Gold Coast, Australia
Abstract
A CMOS, self-biased transconductance amplifier has been designed to be associated and integrated with a silicon capacitive microphone. To meet requirements especially on gain sensitivity, power consumption, and minimization of parasite capacitance effect, we have proposed a cascode structure with the cascode transistor source used as signa input. Switched-capacitor techniques have been applied for realizing self-bias for the amplifier and ensuring its high- gain operation. The proposed amplifier has been designed and fabricated in a 0.8 micrometers CMOS process. It has a surface area of 210 micrometers by 170 micrometers . Experimental results obtained from measuring the fabricated chip show a high-gain sensitivity and a low power dissipation for the amplifier. Results of simulations and measurements have been discussed.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gilles Amendola, Yves Blanchard, Anne Exertier, Serge Spirkovitch, Guo Neng Lu, and George Alquie "Self-biased transconductance amplifier", Proc. SPIE 3891, Electronics and Structures for MEMS, (29 September 1999); https://doi.org/10.1117/12.364455
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KEYWORDS
Amplifiers

Capacitance

Transistors

Acoustics

Field effect transistors

Signal detection

Silicon

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