Paper
18 November 1999 Formation features of microdefect x-ray topography images in silicon crystals
Igor M. Fodchuk, M. D. Raransky, S. M. Novikov, P. E. Marmus, S. V. Bobrovnik
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Proceedings Volume 3904, Fourth International Conference on Correlation Optics; (1999) https://doi.org/10.1117/12.370439
Event: International Conference on Correlation Optics, 1999, Chernivsti, Ukraine
Abstract
On the basis of the numerical solution of Takagi's equation system the influence of ultrasonic wave parameters on enhancement and suppression of diffraction contrast of microdefects on section topographs is investigated. Homogeneous (n equals 6,2 (DOT) 105 cm-3) and random (n equals 2,5 (DOT) 107 cm-3) distribution of microdefects in volume are considered for thin ((mu) t equals 1) and intermediate ((mu) t approximately equals 3) thickness of Si crystal. Influence of strain fields from microdefects and homogeneous strains from ultra sound on integral parameters of crystal perfection is studied.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Igor M. Fodchuk, M. D. Raransky, S. M. Novikov, P. E. Marmus, and S. V. Bobrovnik "Formation features of microdefect x-ray topography images in silicon crystals", Proc. SPIE 3904, Fourth International Conference on Correlation Optics, (18 November 1999); https://doi.org/10.1117/12.370439
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KEYWORDS
Crystals

Diffraction

Scattering

Ultrasonics

X-rays

Silicon

X-ray imaging

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